IRF610 查看數據表（PDF） - Inchange Semiconductor

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IRF610

N-Channel Mosfet Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc N-Channel Mosfet Transistor

isc Product Specification

IRF610

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)DSS Drain-Source Breakdown Voltage

VGS= 0; ID= 0.25mA

VGS(th) Gate Threshold Voltage

RDS(on) Drain-Source On-Resistance

IGSS

Gate-Body Leakage Current

VDS= VGS; ID= 0.25mA

VGS= 10V; ID= 1.6A

VGS= ±20V;VDS= 0

IDSS

Zero Gate Voltage Drain Current

VDS= 200V; VGS=0

VSD

Forward On-Voltage

IS= 3.3A; VGS=0

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

VDS=25V,VGS=0V,

F=1.0MHz

MIN MAX UNIT

200

V

2

4

V

1.5

Ω

±500

nA

250

uA

2.0

V

200

pF

80

pF

25

pF

·SWITCHING CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

Td(on) Turn-on Delay Time

Tr

Rise Time

Td(off) Turn-off Delay Time

VDD=100V,ID=3.3A

VGS=10V,RGEN=24Ω

RGS=24Ω

Tf

Fall Time

MIN

TYP MAX UNIT

8

12

ns

17

26

ns

13

21

ns

9

13

ns

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