IRF450 查看數據表（PDF） - Semelab - > TT Electronics plc
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IRF450 Datasheet PDF : 2 Pages
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IRF450
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
STATIC ELECTRICAL RATINGS
BVDSS Drain – Source Breakdown Voltage VGS = 0
ID = 1mA
500
DBVDSS Temperature Coefficient of
Reference to 25°C
DTJ Breakdown Voltage
ID = 1mA
Static Drain – Source On–State
RDS(on) Resistance 1
VGS = 10V
VGS = 10V
ID = 7.75A
ID = 12A
VGS(th) Gate Threshold Voltage
gfs
Forward Transconductance 1
VDS = VGS
ID = 250mA
2
VDS ³ 15V
IDS = 7.75A
5.5
IDSS Zero Gate Voltage Drain Current
VGS = 0
VDS = 0.8BVDSS
TJ = 125°C
IGSS Forward Gate – Source Leakage
VGS = 20V
IGSS Reverse Gate – Source Leakage
VGS = –20V
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
VGS = 0
Coss Output Capacitance
VDS = 25V
Crss Reverse Transfer Capacitance
f = 1MHz
Qg
Total Gate Charge
VGS = 10V
55
Qgs Gate – Source Charge
ID = 12A
5
Qgd Gate – Drain (“Miller”) Charge
VDS = 0.5BVDSS
27
td(on)
tr
td(off)
tf
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
VDD = 250V
ID = 12A
RG = 2.35W
SOURCE – DRAIN DIODE CHARACTERISTICS
IS
Continuous Source Current
ISM
Pulse Source Current 2
VSD Diode Forward Voltage 1
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge 1
ton
Forward Turn–On Time
PACKAGE CHARACTERISTICS
IS = 12A
TJ = 25°C
VGS = 0
IF = 12A
TJ = 25°C
di / dt £ 100A/ms VDD £ 50V
LD
Internal Drain Inductance (measured from 6mm down drain lead to centre of die)
LS
Internal Source Inductance (from 6mm down source lead to source bond pad)
THERMAL CHARACTERISTICS
RqJC
RqCS
RqJA
Thermal Resistance Junction – Case
Thermal Resistance Case – Sink
Thermal Resistance Junction – Ambient
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Typ.
0.78
2700
600
240
Negligible
5.0
13
0.12
Max. Unit
V
V/°C
0.4
0.5
4
25
250
100
–100
W
V
S (É)
mA
nA
pF
120
19
nC
70
35
190
ns
170
130
12
A
48
1.7
V
1600 ns
14
mC
nH
1.0
°C/W
30
Prelim. 10/99
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