IRF450 查看數據表（PDF） - Inchange Semiconductor
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IRF450 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF450
DESCRIPTION
·13A,500V
·RDS(on)=0.4Ω
·SOA is Power Dissipation Limited
·Linear Transfer Characteristics
·Related Literature
APPLICATIONS
·Designed for applications such as switching regulators,
switching convertors ,motor drivers ,relay driver ,and drivers
for high power bipolar switching transistors requiring high
speed and low gate drive power.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
500
V
±20
V
Drain Current-continuous@ TC=25℃
13
A
Total Dissipation@TC=25℃
125
W
Max. Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-A
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
0.83
30
℃/W
℃/W
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