LL41 查看數據表（PDF） - Vishay Semiconductors
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LL41 Datasheet PDF : 4 Pages
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LL41
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Reserve breakdown voltage (1)
IR = 100 μA
V(BR)
100
Leakage current (1)
VR = 50 V, Tj = 25 °C
IR
VR = 50 V, Tj = 100 °C
IR
Forward voltage (1)
IF = 1 mA
VF
IF = 200 mA
VF
Diode capacitance
VR = 1 V, f = 1 MHz
CD
Note
(1) Pulse test, tp = 300 μs
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
250
1000
TYP.
110
400
2
MAX.
100
20
450
1000
UNIT
V
nA
μA
mV
mV
pF
200
100
Tj = 125° C
150
10
100
50
0
0
50
100
150
20225
Tamb - Ambient Temperature (°C)
Fig. 1 - Admissible Power Dissipation vs. Ambient Temperature
1
- 40 °C
0.1
0.01
0
25 °C
200 400 600 800 1000 1200
18641
VF - Forward Voltage (mV)
Fig. 3 - Typical Forward Characteristics
100000
10000
1000
100
10
Tj = 125 °C
100 °C
75 °C
50 °C
25 °C
20226
1
0 10 20 30 40 50 60 70 80 90 100
VR - Reverse Voltage (V)
Fig. 2 - Typical Reverse Characteristics
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
20227
5 10 15 20 25 30 35 40
VR - Reverse Voltage (V)
Fig. 4 - Typical Capacitance vs. Reverse Voltage
Rev. 1.8, 01-Jun-17
2
Document Number: 85671
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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