IRF614B 查看數據表（PDF） - Fairchild Semiconductor

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IRF614B

250V N-Channel MOSFET

Fairchild Semiconductor 

Typical Characteristics (Continued)

D = 0.5

100

0 .2

0 .1

0 .0 5

1 0 -1

0 .0 2

0 .0 1

sin g le p u lse

※ N otes :

1. Z θ JC(t) = 3.14 ℃ /W M ax.

2. D uty Factor, D =t1/t2

3.

T

JM

-

T

C

=

P

DM

*

Zθ

(t)

JC

PDM

t1

t2

1 0 -5

1 0 -4

1 0 -3

1 0 -2

1 0 -1

100

101

t1, S qu a re W ave P u lse D u ra tion [se c]

Figure 11-1. Transient Thermal Response Curve for IRF614B

D = 0.5

100

0.2

0.1

0.05

1 0 -1

0.02

0.01

sin gle pu lse

※ N otes :

1. Z θ JC(t) = 5.58 ℃ /W M ax.

2. D uty Factor, D =t1/t2

3 . T JM - T C = P DM * Z θ JC(t)

PDM

t1

t2

1 0 -2

1 0 -5

1 0 -4

1 0 -3

1 0 -2

1 0 -1

100

101

t , S qu a re W ave P u lse D u ra tion [se c]

1

Figure 11-2. Transient Thermal Response Curve for IRFS614B

©2001 Fairchild Semiconductor Corporation

Rev. A, November 2001

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