IRF233 查看數據表（PDF） - New Jersey Semiconductor
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IRF233 Datasheet PDF : 3 Pages
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IRF230-233/IRF630-633
MTP12N18/12N20
Maximum Ratings
Symbol
Characteristic
VDSS
Drain to Source Voltage1
VDQR
Drain to Gate Voltage1
RGB = 20 ktt
VGS
Gate to Source Voltage
TJ, Ts!g Operating Junction and
Storage Temperatures
TL
Maximum Lead Temperature
for Soldering Purposes,
1/8" From Case for 5 s
Maximum Thermal Characteristics
R«JC
PD
'DM
Thermal Resistance,
Junction to Case
Total Power Dissipation
at Tc - 25°C
Pulsed Drain Current8
Rating
IRF220/222
IRF620/622
MTP7N20
200
200
±20
-55 to +150
275
Rating
MTP7N18
180
180
±20
-55 to +150
275
Rating
IRF222/223
IRF622/623
150
150
±20
-55 to +150
275
IRF220 - 233
IRF630-633
1.67
75
40
MTP12N18/20
1.25
100
40
Unit
V
V
V
°c
°c
°C/W
W
A
Electrical Characteristics (Tc~25°C unless otherwise noted)
Symbol
Characteristic
Off Characteristics
V(BR)DSS Drain Source Breakdown Voltage
IRF230/232/630/632/
MTP12N20
MTP12N18
IRF231/233/631/633
loss
Zero Gate Voltage Drain Current
Mln
200
180
150
Max
250
1000
IGSS
Gate-Body Leakage Current
IRF230-233
IRF630-633/
MTP12N18/12N20
±100
±500
Unit
Test Conditions
V
Vas = 0 V, ID •= 250 /iA
KA
VDS - Rated VDSS. VGS - 0 V
MA
VDS - 0.8 x Rated VDSS.
VGS = O V, TC-125°C
nA
VGS = ±20 v, vDS = o v
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