2SB859 查看數據表（PDF） - Hitachi -> Renesas Electronics
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2SB859 Datasheet PDF : 4 Pages
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2SB859
Silicon PNP Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SD1135
Outline
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC * 1
Tj
Tstg
Rating
Unit
–100
V
–80
V
–5
V
–4
A
–8
A
40
W
150
°C
–45 to +150
°C
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