KSA1156 查看數據表（PDF） - Foshan Blue Rocket Electronics Co.,Ltd.

零件编号

产品描述 (功能)

比赛名单

KSA1156

Silicon PNP transistor in a TO-126F Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

KSA1156

Rev.E Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Base Current - Continuous

Collector Current – Continuous

Collector Current – Continuous(Pulse)

Collector Power Dissipation

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IB

IC

ICP

PC

PC(Tc=25℃)

Tj

Tstg

DATA SHEET

数值

Rating

-400

-400

-7.0

-0.25

-500

-1.0

1.0

10

150

-55～150

单位

Unit

V

V

V

A

mA

A

W

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector-Emitter Sustaining

Voltage

符号

Symbol

VCEO(SUS)

VCEX(SUS)

测试条件

Test Conditions

IC=-100mA IB=-10mA

L=20mH

IC=-200mA VBE(off)=5V

IB1=-IB2=-20mA

L=10mH

最小值 典型值 最大值 单位

Min Typ Max Unit

-400

V

-400

V

Collector Cut-Off Current

ICBO VCB=-400V IE=0

-100 μA

Emitter Cut-off Current

Collector Cut-Off Current

DC Current Gain

Collector to Emitter Saturation

Voltage

IEBO VEB=-5.0V IC=0

ICEX1

ICEX2

VCE=-400V

VBE(off)=1.5V

VCE=-400V TC=125℃

VBE(off)=1.5v

hFE VCE=-5.0V IC=-100mA 30

VCE(sat) IC=-100mA IB=-10mA

-10 μA

-100 μA

-1.0 mA

200

-1.0 V

Base to Emitter Saturation Voltage VBE(sat) IC=-100mA IB=-10mA

-1.2 V

Turn On Time

Storage Time

Fall Time

tON

VCC=-150V IB1=-10mA

tSTG

RL=1.5KΩ IC=-100mA

IB2=20mA

tF

1.0 μS

4.0 μS

1.0 μS

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