BU408 查看數據表（PDF） - Fairchild Semiconductor
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BU408 Datasheet PDF : 5 Pages
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BU406/406H/408
High Voltage Switching
• Use In Horizontal Deflection Output Stage
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Value
400
200
6
7
10
4
60
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICES
IEBO
VCE(sat)
VBE(sat)
fT
tOFF
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
: BU406
: BU406H
: BU408
Base-Emitter Saturation Voltage
: BU406
: BU406H
: BU408
Current Gain Bandwidth Product
Turn OFF Time
: BU406
: BU406H
: BU408
VCE = 400V, VBE = 0
VCE = 250V, VBE = 0
VCE = 250V, VBE = 0 @ TC=150°C
VBE = 6V, IC = 0
IC = 5A, IB = 0.5A
IC = 5A, IB = 0.8A
IC = 6A, IB = 1.2A
IC = 5A, IB = 0.5A
IC = 5A, IB = 0.5A
IC = 6A, IB = 1.2A
VCE = 10V, IC = 0.5A
IC = 5A, IB = 0.5A
IC = 5A, IB = 0.8A
IC = 6A, IB = 1.2A
Min.
10
Max.
5
100
1
1
1
1
1
1.2
1.2
1.5
0.75
0.4
0.4
Units
mA
µA
mA
mA
V
V
V
V
V
V
MHz
µs
µs
µs
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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