MJE18006G 查看數據表（PDF） - ON Semiconductor
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MJE18006G Datasheet PDF : 7 Pages
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MJE18006G
5
4 VCE
3
dyn 1 ms
2
dyn 3 ms
1
0
-1
-2
90% IB
-3
1 ms
-4
3 ms
-5 IB
0
1
2
3 TIM4 E 5
6
7
8
Figure 18. Dynamic Saturation Voltage Measurements
10
9 IC
8
7
90% IC
tfi
tsi
6
5 VCLAMP
4
3 IB
2
10% VCLAMP
90% IB1
tc
10% IC
1
0
0
1
2
3
4
5
6
7
8
TIME
Figure 19. Inductive Switching Measurements
+15 V
1 mF
150 W
3W
100 W
3W
MPF930
+10 V
MPF930
MTP8P10
100 mF
MTP8P10
MUR105
RB1
Iout
A
VCE
IB1
IB
50 W
COMMON
500 mF
-Voff
MJE210
150 W
3W
RB2
MTP12N10
1 mF
V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
VCC = 20 VOLTS
IC(pk) = 100 mA
VCE PEAK
IC PEAK
IB2
INDUCTIVE SWITCHING
L = 200 mH
RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED FOR
DESIRED IB1
RBSOA
L = 500 mH
RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED
FOR DESIRED IB1
Table 1. Inductive Load Switching Drive Circuit
TYPICAL THERMAL RESPONSE
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
RqJC(t) = r(t) RqJC
RqJC = 1.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
0.1
1
10
100
1000
t, TIME (ms)
Figure 20. Typical Thermal Response (ZqJC(t)) for MJE18006
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