FM1608B 查看數據表（PDF） - Cypress Semiconductor

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FM1608B

64-Kbit (8 K × 8) Bytewide F-RAM Memory

Cypress Semiconductor 

FM1608B

64-Kbit (8 K × 8) Bytewide F-RAM Memory

2-Mbit (128 K × 16) F-RAM Memory

Features

■ 64-Kbit ferroelectric random access memory (F-RAM) logically

organized as 8 K × 8

❐ High-endurance 100 trillion (1014) read/writes

❐ 151-year data retention (see the Data Retention and

Endurance table)

❐ NoDelay™ writes

❐ Advanced high-reliability ferroelectric process

■ SRAM and EEPROM compatible

❐ Industry-standard 8 K × 8 SRAM and EEPROM pinout

❐ 70-ns access time, 130-ns cycle time

■ Superior to battery-backed SRAM modules

❐ No battery concerns

❐ Monolithic reliability

❐ True surface mount solution, no rework steps

❐ Superior for moisture, shock, and vibration

❐ Resistant to negative voltage undershoots

■ Low power consumption

❐ Active current 15 mA (max)

❐ Standby current 25 A (typ)

■ Voltage operation: VDD = 4.5 V to 5.5 V

Logic Block Diagram

■ Industrial temperature: –40 C to +85 C

■ 28-pin small outline integrated circuit (SOIC) package

■ Restriction of hazardous substances (RoHS) compliant

Functional Overview

The FM1608B is a 8 K × 8 nonvolatile memory that reads and

writes similar to a standard SRAM. A ferroelectric random

access memory or F-RAM is nonvolatile, which means that data

is retained after power is removed. It provides data retention for

over 151 years while eliminating the reliability concerns,

functional disadvantages, and system design complexities of

battery-backed SRAM (BBSRAM). Fast write timing and high

write endurance make the F-RAM superior to other types of

memory.

The FM1608B operation is similar to that of other RAM devices

and therefore, it can be used as a drop-in replacement for a

standard SRAM in a system. Minimum read and write cycle times

are equal. The F-RAM memory is nonvolatile due to its unique

ferroelectric memory process. These features make the

FM1608B ideal for nonvolatile memory applications requiring

frequent or rapid writes.

The device is available in a 28-pin SOIC surface mount package.

Device specifications are guaranteed over the industrial

temperature range –40 °C to +85 °C.

A12-0

A12-0

8Kx8

F-RAM Array

CE

Control

WE

Logic

OE

I/O Latch & Bus Driver

DQ 7-0

Cypress Semiconductor Corporation • 198 Champion Court

Document Number: 001-86211 Rev. *C

• San Jose, CA 95134-1709 • 408-943-2600

Revised March 10, 2014

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