BDX63 查看數據表（PDF） - Inchange Semiconductor
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BDX63 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDX63/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDX63
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDX63A
BDX63B
IC= 100mA ;IB=0
BDX63C
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 12mA
VBE(on) Base-Emitter On Voltage
VECF
C-E Diode Forward Voltage
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 3A ; VCE= 3V
IF= 3A
VCE= 1/2VCEOmax; IB= 0
VCB= VCEOmax;IE= 0
VCB= 1/2VCBOmax;IE= 0;TJ= 200℃
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 0.5A ; VCE= 3V
hFE-2
DC Current Gain
IC= 3A ; VCE= 3V
hFE-3
DC Current Gain
IC= 8A ; VCE= 3V
COB
Output Capacitance
Switching times
IE= 0 ; VCB= 10V; ftest= 1MHz
ton
Turn-on Time
toff
Turn-off Time
IC= 3A; IB1= -IB2= 12mA
MIN TYP. MAX UNIT
60
80
V
100
120
2
V
2.5
V
1.2
V
0.2 mA
0.2
2
mA
5
mA
2500
1000
2600
100
pF
0.5
μs
5
μs
isc Website：www.iscsemi.cn
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