T8A6CI
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Repetitive Peak Off-state Current
IDRM
Ẑ
Gate Trigger Voltage
ẑ
VGT
Ẓ
ẓ
Ẑ
Gate Trigger Current
ẑ
IGT
Ẓ
ẓ
Peak On-State Voltage
Gate Non-Trigger Voltage
Holding Current
Critical Rate of Rise of
Off-state Voltage
Critical Rate of Rise of
Off-state Voltage at commutation
Thermal Resistance
VTM
VGD
IH
dV/dt
(dV/dt)C
Rth(j-c)
TEST CONDITION
VDRM=Rated
T2(+), Gate(+)
T2(+), Gate(-)
T2(-), Gate(-)
VD=12V,
T2(-), Gate(+)
RL=20ή
T2(+), Gate(+)
T2(+), Gate(-)
T2(-), Gate(-)
T2(-), Gate(+)
ITM=12A
VD=Rated, Tc=125ᴱ
VD=12V, ITM=1A
Tj=125ᴱ, VDRM=Rated
Exponential Rise
Tj=125ᴱ,
(di/dt)C=-4.5A/mS, VD=2/3VDRM
Junction to Case, AC
MIN.
-
-
-
-
-
-
-
-
-
-
0.2
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
300
MAX.
20
1.5
1.5
1.5
-
30
30
30
-
1.5
-
50
UNIT
ỌA
V
mA
V
V
mA
-
V/ỌS
10
-
-
V/ỌS
-
-
3.6 ᴱ/W
1997. 10. 28
Revision No : 2
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