RFL1N18 查看數據表（PDF） - New Jersey Semiconductor

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RFL1N18

1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs

New Jersey Semiconductor 

J.E.IS.S.U

C/

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

, One,.

RFL1N18,

RFL1N20

1A, 180V and 200V, 3.65 Ohm,

N-Channel Power MOSFETs

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

Features

• 1 A, 180V and 200V

• rDS(ON) = 3.65Q

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

Description

These are N-Channel enhancement mode silicon gate

power field effect transistors designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

Symbol

OD

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFL1N18

TO-205AF

RFL1N18

RFL1N20

TO-205AF

RFL1N20

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-205AF

DRAIN -

(CASE)

GATE

SOURCE

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going

to press. However, NJ Semi-Conductorsassumes no responsibility for any errors or omissions discovered in its use.

NJ Semi-Conductorsencouragescustomers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

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