TL3100M 查看數據表（PDF） - LiteOn Technology
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TL3100M Datasheet PDF : 4 Pages
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LITE-ON
SEMICONDUCTOR
SURFACE MOUNT
THYRISTOR SURGE PROTECTIVE DEVICE
FEATURES
Oxide Glass Passivated Junction
Bidirectional protection in a single device
Surge capabilities up to 50A @10/1000us or 250A
@8/20us
High off state Impedance and low on state voltage
Plastic material has UL flammability classification
94V-0
MECHANICAL DATA
Case : JEDEC DO-15 Molded plastic
Polarity : Denotes none cathode band
Weight : 0.4 grams
TL0640M thru TL3500M
Bi-Directional
VDRM - 58 to 320 Volts
IPP
- 50 Amperes
DO-15
A
B
A
C
D
DO-15
Dim.
Min.
Max.
A
25.4
-
B
5.80
7.60
C
0.71
0.86
D
2.60
3.60
All Dimensions in millimeter
MAXIMUM RATINGS
CHARACTERISTICS
Non-repetitive peak impulse current @ 10/1000us
Non-repetitive peak On-state current @ 8.3ms (one half cycle)
Junction and storage temperature range
SYMBOL
IPP
ITSM
TJ ; TSTG
THERMAL RESISTANCE
CHARACTERISTICS
Junction to leads
Junction to ambient on print circuit (on recommended pad layout)
Typical positive temperature coefficient for brekdown voltage
SYMBOL
Rth(J-L)
Rth(J-A)
△VBR/△TJ
MAXIMUM RATED SURGE WAVEFORM
WAVEFORM
2/10 us
8/20 us
10/160 us
10/700 us
10/560 us
10/1000 us
STANDARD
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T K20/21
FCC Part 68
GR-1089-CORE
IPP (A)
300
250
120
100
75
50
100
50
0
tr
VALUE
50
25
-55 to +150
VALUE
60
100
0.1
UNIT
A
A
℃
UNIT
℃/W
℃/W
%/℃
Peak value (Ipp)
tr= rise time to peak value
tp= Decay time to half value
Half value
tp
TIME
REV. 0, 09-Oct-2001, KDWD04
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