BD678A 查看數據表（PDF） - Inchange Semiconductor
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产品描述 (功能)
比赛名单
BD678A Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BD676A/678A/680A/682
DESCRIPTION
·
·With TO-126 package
·Complement to type BD675A/677A/679A/681
·DARLINGTON
·High DC current gain
APPLICATIONS
·For medium power linear and
switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
BD676A
VCBO
Collector-base voltage
BD678A
BD680A
Open emitter
BD682
BD676A
VCEO
BD678A
Collector-emitter voltage
BD680A
Open base
BD682
VEBO
Emitter -base voltage
Open collector
IC
Collector current
ICM
Collector current-Peak
IB
Base current
PC
Collector power dissipation
TC=25℃
Tj
Junction temperature
Tstg
Storage temperature
VALUE
-45
-60
-80
-100
-45
-60
-80
-100
-5
-4
-6
-0.1
40
150
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
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