FZT694B(1995) 查看數據表（PDF） - Diodes Incorporated.

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FZT694B
(Rev.:1995)

SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

Diodes Incorporated. 

FZT694B

TYPICAL CHARACTERISTICS

0.8

0.6

0.4

0.2

IC/IB=200

IC/IB=100

IC/IB=10

Tamb=25°C

0

0.01

0.1

1

10

I+ - Collector Current (Amps)

VCE(sat) v IC

-55°C

+25°C

0.8

+100°C

+175°C

0.6

IC/IB=100

0.4

0.2

0

0.01

0.1

1

10

I+ - Collector Current (Amps)

VCE(sat) v IC

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

0

+100°C

+25°C

-55°C

VCE=2V

1.5K

1K

500

0.01

0.1

1

10

I+ - Collector Current (Amps)

hFE v IC

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

-55°C

+25°C

+100°C

+175°C

IC/IB=100

0

0.01

0.1

1

10

I+ - Collector Current (Amps)

VBE(sat) v IC

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

0

-55°C

+25°C

+100°C

+175°C

VCE=2V

0.01

0.1

1

10

I+ - Collector Current (Amps)

VBE(on) v IC

10

1

DC

1s

0.1

100ms

10ms

1ms

100us

0.01

1

10

100

1000

VCE - Collector Emitter Voltage (V)

Safe Operating Area

3 - 226

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