PSD25(2003) 查看數據表（PDF） - Powersem GmbH
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PSD25 Datasheet PDF : 2 Pages
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PSD 25
30
A
25 T=150°C
I-I-FF-S(-MO-V-)
1.6
IFSM (A)
TVJ=45°C TVJ=150°C
380
340
20
1.4
15
1.2
10
1
0 VRRM
0.8
5
1/2 VRRM
IF
T=25°C
0.6
0 VF
V
1
1.5
0.4
1 VRRM
100
101 t[ms] 102
103
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
60
[W]
PSD
25N
50
40
30
20
10
PVTOT
0
IFAVM
DC
sin.180°
rec.120°
rec.60°
rec.30°
20
0
[A]
0.53 0.12
0.95
1.78
3.45
8.45
50
Tamb
55
TC
60
= RTHCA [K/W] 65
70
75
80
85
90
95
100
105
110
115
120
125
130
135
140
100
145
1°5C0
150
[K]
Fig. 4 Power dissipation versus direct output current and ambient
temperature
103
A2s
TVJ=45°C
TVJ=150°C
102
1
2
4 6 10
t [ms]
Fig. 3 ∫i2dt versus time
(1-10ms) per diode (or thyristor)
30
[A]
20
DC
sin.180°
rec.120°
rec.60°
rec.30°
10
IdAV
0
50
100
150
200
TC(°C)
Fig.5 Maximum forward current
at case temperature
12
K/W
10
Z thJK
Z thJC
8
6
4
2
Zth
0.01
0.1
1
10
t[s]
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
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