EGP10A 查看數據表（PDF） - New Jersey Semiconductor
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EGP10A Datasheet PDF : 2 Pages
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RATINGS AND CHARACTERISTIC CURVES EGP10A THRU EGP10M
FIG.1 - FORWARD CURRENT DERATING CURVE
1.0
RESISTIVE OR
\FINDUCTIVE LOAD
Do: 5CL
f«
0.5
*Ou- ^LQU;
LU [£
<Oce 3o
EGF
Ak
v 10M \H
A-EGP1
V•^
s \\
LU
0.375' (9.5mm )LEAD
k\5
AMBIENT TEMPERATURE, °C
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
\
1 II
TJ=TJ max.
I I
8.3ms SINGLEHALFSINE w V
(JEDEC Method)
50
Vi
N
\,x
*•,
*.
?V
EGP10A -EGP OG
/
EGP10J-EGP10M
75
^ ,.^J-x,
^-^ •>-»
-^.
<s.
••
•»
••
%•
«•
•.
•.
100 125 150 175
10
100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10.00
/*
. PULSE WIDTH=300uS
: 1% DUTY CYCLE
:=s
/
t.«*'
LtUr
O
Q o:
1.00
f
j»
y
/ /
.»•
/
/
J
+—
LU
0=
T^ -^
r .-
/^ >
,"
0.10
h4
~"^
0.01
I'
ll
P10J-EGP10M ~
P10G
-
EG P10A-EGP10F
l
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.1
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
a 100
LU
FIG.5 - TYPICAL JUNCTION CAPACITANCE
ti-i25°C
——
^*n
r ••
"•*»» -».
0
6
5
*
2
..
^
' i1
1
.2 .4 1.0 2 4 10 20 40 100
REVERSE VOLTAGE, VOLTS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
100
10
-
T>125°C-
0.1
0 20
40
60
80
100 110
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
100
Q,
10
IK
LU
I
0.1
0.01
0.10 1.0
10
100
t , PULSE DURATION, sec
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