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1MBH15-120 查看數據表(PDF) - Fuji Electric

零件编号
产品描述 (功能)
比赛名单
1MBH15-120
Fuji
Fuji Electric Fuji
1MBH15-120 Datasheet PDF : 5 Pages
1 2 3 4 5
1MBH15-120, 1MBH15D-120
Molded IGBT
Electrical characteristics (at Tj=25°C unless otherwise specified)
1MBH15-120 / IGBT
Item
Symbol
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
tr
toff
tf
Characteristics
Min.
Typ.
5.5
1700
300
120
Max.
1.0
20
8.5
3.5
1.2
0.6
1.5
0.5
1MBH15D-120 / IGBT+FWD
Item
Symbol
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
FWD forward on voltage
Reverse recovery time
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
tr
toff
tf
VF
trr
Characteristics
Min.
Typ.
5.5
1700
300
120
Max.
1.0
20
8.5
3.5
1.2
0.6
1.5
0.5
3.0
0.35
Conditions
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=15mA
VGE=15V, IC=15A
VGE=0V
VCE=10V
f=1MHz
VCC=600V IC=15A
VGE=±15V
RG=120 ohm
(Half Bridge)
Unit
mA
µA
V
V
pF
µs
Conditions
Unit
VGE=0V, VCE=1200V
mA
VCE=0V, VGE=±20V
µA
VCE=20V, IC=15mA
V
VGE=15V, IC=15A
V
VGE=0V
pF
VCE=10V
f=1MHz
VCC=600V, IC=15A
µs
VGE=±15V
RG=120 ohm
(Half Bridge)
IF=15A, VGE=0V
V
IF=15A, VGE=-10V, di/dt=100A/µs µs
Thermal resistance characteristics
1MBH15-120 / IGBT
Item
Symbol
Thermal resistance
Rth(j-c)
1MBH15D-120 / IGBT+FWD
Item
Symbol
Thermal resistance
Rth(j-c)
Rth(j-c)
Characteristics
Min.
Typ.
Max.
0.51
Conditions
IGBT
Characteristics
Min.
Typ.
Max.
0.51
1.04
Conditions
IGBT
FWD
Unit
°C/W
Unit
°C/W
°C/W
Outline drawings, mm
1MBH15-120, 1MBH15D-120
TO-3PL

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