K1693 查看數據表（PDF） - Inchange Semiconductor
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K1693 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1693
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 4A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=500V; VGS= 0
VSD
Diode Forward Voltage
IF=8A; VGS=0
ton
Turn-on time
toff
Turn-off time
VGS=10V;ID=4A;RL=38Ω
MIN TYP MAX UNIT
500
V
2.0
4.0
V
0.68 0.85
Ω
±100 nA
250
uA
2.0
V
60
63
ns
120 135
ns
isc website：www.iscsemi.cn
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