D1213 查看數據表（PDF） - Inchange Semiconductor
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D1213 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1213
DESCRIPTION
·With TO-3PN package
·Low collector saturation voltage
·Large current capacity.
·Complement to type 2SB904
APPLICATIONS
·Large current switching of relay drivers,
high-speed inverters, converters.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current (DC)
ICP
Collector current (Pulse)
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
Ta=25℃
VALUE
60
30
6
20
30
60
2.5
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
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