A1276 查看數據表（PDF） - New Jersey Semiconductor

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比赛名单

A1276

Silicon PNP Power Transistor

New Jersey Semiconductor 

Silicon PNP Power Transistor

2SA1276

ELECTRICAL CHARACTERISTICS

Tc=25t: unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage lc= -10mA; le= 0

-30

V

V(BR)EBO Emitter-Base Breakdown Voltage

!E=-1mA; lc=0

-5

V

VcE(sat) Collector-Emitter Saturation Voltage IG= -2A; IB= -0.2A

-0.8

V

VeE(on) Base-Emitter On Voltage

ICBO

Collector Cutoff Current

lc= -0.5A; VCE= -2V

VCB= -20V; IE= 0

-1.0

V

-1.0 u A

IEBO

Emitter Cutoff Current

VEB= -5V; lc= 0

-1.0 u A

hpE-1

DC Current Gain

lc= -0.5A; VCE= -2V

70

240

hFE-2

DC Current Gain

lc= -2.5A; VCE= -2V

25

ft

Current-Gain—Bandwidth Product

lc= -0.5A;VCE= -2V

100

MHz

COB

Output Capacitance

IE=0; VCB= -10V; f,est= 1.0MHz

40

PF

• h.FE-1 Classifications

o

Y

70-140

120-240

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