A1232 查看數據表（PDF） - New Jersey Semiconductor
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A1232 Datasheet PDF : 2 Pages
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J.£.iizi
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
ioauct i, One.
Silicon PNP Power Transistor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
:V(BR)CEo=-130V(Min)
• Good Linearity of hFE
• Complement to Type 2SC3012
APPLICATIONS
• For audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25-Q
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-130
V
VCEO Collector-Emitter Voltage
-130
V
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-10
A
I CM
Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25"C
Tj
Junction Temperature
-15
A
100
W
150
•c
Tstg
Storage Temperature Range
-55-150
"C
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SA1232
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PIN: l.Bsse
i.Collector
3. Emitter
TC-^N Package
B
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Y- ,F-"S
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K
!
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G * *L
.... D
*- *^R •*-H-*r
mm
DIM MIN MAX
A 19.60 20.30
B 15.50 15.70
C 4.70' 4.90
D 0.90 1.10
E 1.90 2.10
F 3,40 3.60
G 2.90 3.20
H 3.20 3.40
J 0.595 0.605
K 19.80 20.70
L 1.90 2,20
M 10.89 10.91
Q 4.90 5.10
R 3.35 3.45
S 1.995 2.100
U 5.90 6.20
Y 9.90 10.10
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice, liitbnnation furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
lo press. However, NJ Semi-Conductors assumes no responsibility for an> errors or omissions discovered in its use.
\ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
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