A1227 查看數據表（PDF） - New Jersey Semiconductor

零件编号

产品描述 (功能)

比赛名单

A1227

Silicon PNP Power Transistor

New Jersey Semiconductor 

Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VoE(sat) Collector-Emitter Saturation Voltage lc= -5.0A; IB= -0.5A

VeE(sat) Base-Emitter Saturation Voltage

lc= -5.0A; le= -0.5A

ICBO

Collector Cutoff Current

VCB= -140V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -3V; lc= 0

hpE-1

DC Current Gain

lc= -2A; VCE= -5V

hpE-2

DC Current Gain

lc= -5A; VCE= -5V

COB

Output Capacitance

|E=0;VCB=-10V;f= 1.0MHz

ft

Current-Gain—Bandwidth Product lc= -1A; VCE= -5V

hpE-1 Classifications

R

Q

P

60-120 100-200 160-320

2SA1227

MIN TYP. MAX UNIT

-1.5

V

-2.0 V

-50 M A

-50 |J A

60

320

40

280

PF

60

MHz

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