2SA1726 查看數據表（PDF） - New Jersey Semiconductor
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2SA1726 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
2SA1726
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -25mA ; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= -2A; IB= -0.2A
ICBO
Collector Cutoff Current
VCB= -80V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= -6V; lc= 0
HFE
DC Current Gain
lc= -2A ; VCE= -4V
fr
Current-Gain—Bandwidth Product
IE=0.5A;VCE=-12V
COB
Output Capacitance
le=0;VCB=-10V;ftest=1MHz
Switching Times
ton
Turn-on Time
lstg
Storage Time
tf
Fall Time
lc=-3A,RL=10Q,
|B1= -|B2= -0.3A,Vcc= -30V
MIN TYP. MAX UNIT
-80
V
-0.5
V
-10
MA
-10
MA
50
180
20
MHz
150
PF
0.18
MS
1.10
US
0.21
MS
Classifications
o
P
Y
50-100 70-140 90-180
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