C3619 查看數據表（PDF） - Inchange Semiconductor
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C3619 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3619
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
ICBO
Collector cutoff current
VCB=240V;IE=0
IEBO
Emitter cutoff current
VEB=7V;IC=0
VCEsat Collector-emitter saturation voltage IC=10mA ;IB=1mA
VBEsat Base-emitter saturation voltage
IC=10mA ;IB=1mA
hFE-1
DC current gain
IC=4mA ; VCE=10V
hFE-2
DC current gain
IC=20mA ; VCE=10V
COb
Output capacitance
IE=0; VCB=20V;f=1MHz
fT
Transition frequency
IC=20mA ; VCE=10V,
MIN TYP. MAX UNIT
0.1
μA
0.1
μA
1
V
1
V
20
30
200
3
pF
50
MHz
2
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