C4004(2003) 查看數據表（PDF） - Panasonic Corporation
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C4004 Datasheet PDF : 4 Pages
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Power Transistors
2SC4004
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
■ Features
• High-speed switching
• High collector-base voltage (Emitter open) VCBO
• Wide safe operation area
• Satisfactory linearity of forward current transfer ratio hFE
• Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
900
V
Collector-emitter voltage (E-B short) VCES
900
V
Collector-emitter voltage (Base open) VCEO
800
V
Emitter-base voltage (Collector open) VEBO
7
V
Base current
IB
0.3
A
Collector current
IC
1
A
Peak collector current
ICP
2
A
Collector power dissipation
PC
30
W
Ta = 25°C
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ 3.1±0.1
1.4±0.1
0.8±0.1
1.3±0.2
0.5+–00..12
2.54±0.3
5.08±0.5
123
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
IC = 1 mA, IB = 0
VCB = 900 V, IE = 0
VEB = 7 V, IC = 0
VCE = 5 V, IC = 0.05 A
VCE = 5 V, IC = 0.5 A
IC = 0.2 A, IB = 0.04 A
IC = 0.2 A, IB = 0.04 A
VCE = 10 V, IC = 0.05 A, f = 1 MHz
IC = 0.2 A
IB1 = 0.04 A, IB2 = − 0.04 A
VCC = 250 V
800
V
50
µA
50
µA
6
3
1.5
V
1.0
V
4
MHz
1.0
µs
3.0
µs
1.0
µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
SJD00125BED
1
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