C2660 查看數據表（PDF） - Inchange Semiconductor
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C2660 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2660 2SC2660A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=0.5A ;IB=50m A
VBE
Base-emitter on voltage
IC=0.4A ; VCE=10V
V(BR)CEO
Collector-emitter
breakdown voltage
2SC2660
2SC2660A
IC=5mA ;IB=0
V(BR)CBO Collector-base breakdown voltage IC=0.5mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=0.5mA ;IC=0
ICBO
Collector cut-off current
VCB=200V;IE=0
IEBO
Emitter cut-off current
VEB=4V; IC=0
hFE-1
DC current gain
IC=0.15A ; VCE=10V
hFE-2
DC current gain
IC=0.4A ; VCE=10V
MIN TYP. MAX UNIT
1.0
V
1.0
V
150
V
180
200
V
6
V
50
μA
50
μA
60
240
50
hFE-1 classifications
Q
P
60-140
100-240
2
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