Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Off Characteristics (1)
Drain - Source Breakdown Voltage
(VGS = 0 Vdc, ID =10 μA)
V(BR)DSS
70
—
—
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
On Characteristics
Gate Threshold Voltage (1)
(VDS = 10 V, ID = 200 μA)
Gate Quiescent Voltage (2)
(VDS = 32 V, ID = 100 mA)
Drain - Source On - Voltage (1)
(VGS = 10 V, ID = 3 A)
VGS(th)
2
VGS(Q)
2.5
VDS(on)
—
2.9
4
3.3
4.5
0.41
0.45
Dynamic Characteristics (1)
Input Capacitance
(VDS = 32 V, VGS = 0 V, f = 1 MHz)
Ciss
—
97.3
—
Output Capacitance
(VDS = 32 V, VGS = 0 V, f = 1 MHz)
Coss
—
49
—
Reverse Transfer Capacitance
(VDS = 32 V, VGS = 0 V, f = 1 MHz)
Crss
—
1.91
—
Functional Characteristics, Narrowband Operation (2) (In Freescale MRF374A Narrowband Circuit, 50 ohm system)
Common Source Power Gain
(VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
Gps
16
17.3
—
Drain Efficiency
(VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
η
36
41.2
—
Intermodulation Distortion
(VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
IMD
—
- 32.5
- 28
1. Each side of device measured separately.
2. Measurement made with device in push - pull configuration.
Unit
Vdc
μAdc
μAdc
Vdc
Vdc
Vdc
pF
pF
pF
dB
%
dB
MRF374A
2
RF Device Data
Freescale Semiconductor