IRL630S 查看數據表（PDF） - International Rectifier
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IRL630S Datasheet PDF : 8 Pages
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IRL630S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Ciss
Coss
Crss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
200 ––– ––– V VGS = 0V, ID = 250µA
––– 0.27 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.40 Ω
––– ––– 0.50
VGS = 5.0V, ID = 5.4A
VGS = 4.0V, ID = 4.5A
1.0 ––– 2.0 V VDS = VGS, ID = 250µA
4.8 ––– ––– S
––– ––– 25 µA
––– ––– 250
––– ––– 100 nA
––– ––– -100
––– ––– 40
VDS = 50V, ID = 5.4A
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 125°C
VGS = 10V
VGS = -10V
ID = 9.0A
––– ––– 5.5
––– ––– 24
nC VDS = 160V
VGS = 10V, See Fig. 6 and 13
––– 8.0 ––– ns VDD = 100V
––– 57 –––
ID = 9.0A
––– 38 –––
RG = 6.0Ω
––– 33 –––
RD = 11Ω, See Fig. 10
Between lead,
––– 4.5 –––
6mm (0.25in.)
nH
from package
––– 7.5 –––
and center of die contact
––– 1100 –––
––– 220 –––
VGS = 0V
pF VDS = 25V
––– 70 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 9.0
showing the
A
integral reverse
––– ––– 36
p-n junction diode.
––– ––– 2.0 V TJ = 25°C, IS = 9.0A, VGS = 0V
––– 230 350 ns TJ = 25°C, IF = 9.0A
––– 1.7 2.6 µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 4.6mH
RG = 25Ω, IAS = 9.0A. (See Figure 12)
ISD ≤ 9.0A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
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