IRF230 查看數據表（PDF） - Intersil
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IRF230 Datasheet PDF : 7 Pages
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IRF230, IRF231, IRF232, IRF233
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF230
Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .VDS
200
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR
200
Continuous Drain Current. . .
TC = 100oC . . . . . . . . . . . .
...........
...........
...
...
.........
.........
ID
ID
9.0
6.0
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM
36
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD
75
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.6
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . Tpkg
150
-55 to 150
300
260
IRF231
150
150
9.0
6.0
36
±20
75
0.6
150
-55 to 150
300
260
IRF232
200
200
8.0
5.0
32
±20
75
0.6
150
-55 to 150
300
260
IRF233
150
150
8.0
5.0
32
±20
75
0.6
150
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to TJ = 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
IRF230, IRF232
BVDSS ID = 250µA, VGS = 0V, (Figure 10)
200
-
-
V
IRF231, IRF233
150
-
-
V
Gate Threshold Voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
IRF230, IRF231
VGS(TH) VGS = VDS, ID = 250µA
IGSS VGS = ±20V
IDSS VDS = Rated BVDSS, VGS = 0V
VDS
TJ =
= 0.8 x
125oC
Rated
BVDSS,
VGS
=
0V
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
2.0
-
4.0
V
±100 nA
-
-
25
µA
-
-
250 µA
9.0
-
-
A
IRF232, IRF233
8.0
-
-
A
Drain to Source On Resistance (Note 2)
IRF230, IRF231
rDS(ON) ID = 5A, VGS = 10V, (Figure 8, 9)
-
0.25 0.4
Ω
IRF232, IRF233
-
0.4 0.6
Ω
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
gfs VDS ≥ 50V, ID = 5A, (Figure 12)
3.0 4.8
-
S
td(ON) VDD = 90V, ID ≈ 5A,RG = 15Ω, RL =18Ω
-
(Figures 17, 18) MOSFET Switching Times are
tr
Essentially Independent of Operating
-
td(OFF) Temperature
-
-
30
ns
-
50
ns
-
50
ns
tf
-
-
40
ns
Qg(TOT) VGS = 10V, ID = 12A, VDS = 0.8V x Rated BVDSS, -
Ig(REF) = 1.5mA, (Figures 14, 19, 20) Gate
Charge is Essentially Independent of Operating
Qgs Temperature
-
19
30
nC
10
-
nC
Qgd
-
9
-
nC
2
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