2SC3310 查看數據表（PDF） - New Jersey Semiconductor

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2SC3310

Silicon NPN Power Transistor

New Jersey Semiconductor 

J.

£/ loducti, One.

C/^

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.SA.

Silicon NPN Power Transistor

TELEPHONE: (973) 376-2922

(212) 227-6005

FAX: (973) 376-8960

2SC3310

DESCRIPTION

• High Collector-Emitter Breakdown Voltage-

V,BR,cEO=400V(Min)

• High Switching Speed

APPLICATIONS

• Switching regulator and high voltage switching applications

• High speed DC-DC converter applications.

PIN t.BASE

2.COUECTQR

3.BMTTB4

TO-220Fa package

ABSOLUTE MAXIMUM RATINGS(Ta=25-C)

SYMBOL

PARAMETER

VALUE j UNIT

V-.no

Collectoi-Base Voltage

500

V

V-,ro

Collector-bmitter Voltage

400

Emitter-Base Voltage

Collector Current-Continuous

l.:v

Collector Current Peak

Base Current Continuous

Collector Power Dissipation

@ T-=?5i

Collector Power Dissipation

30

W

-G

a

K

I

QIM

k -0

mm

M

&4S

OJB

Junction Temperature

Storage Temperature Range

150

-55-150

Si

X9B

JM

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Qualihy -Semi-Conductors

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