C3310 查看數據表（PDF） - New Jersey Semiconductor
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C3310 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Vsv ,:,:;•: Collector-Emitter Breakdown Voltage lr= 10mA IP- D
Vb-^U Collector-Base Breakdown Voltage
!,:= 1mA:IE= 0
V-;„„„ Collector-Emitter Saturation Voltage lr= 5A, h= 1A
Vac.sa.,
I..3,,
Base-tmirter Saturation Voltage
Collector Cutoff Current
lc= 5A. l== 1A
V-B= 400V; lc= 0
ILIV,
Emitter Cutoff Current
VtB= TV l.= 0
h=c.i
DC Current Gam
|( = 3 A . V , ( = 5V
"-,_..
DC Current Gam
Ir- 5A V,-.h= 5V
'Switching times
Rise Time
Storage Time
Tall Time
IP,= -IF,?=0.4A
RL= bOii,V;c 200V
P//=20i. s,Duty Cycle- 1%
2SC3310
WIN TYP. MAX I UNIT
400
'< V
&00
V
;
12
8
10:
V
1S
V
100 . . A
1
mA
f
j
1.0
?5 i ,s
1.0 ; .. s
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