S2800N 查看數據表（PDF） - New Jersey Semiconductor
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S2800N Datasheet PDF : 2 Pages
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S2800 Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Rejc
2
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Win
Typ
Max
Unit
Peak Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TC = 25°C
Tc = 100°C
IDRM. 'RRM
—
—
10
uA
2
mA
Instantaneous On-State Voltage,
(IjM = 30 A Peak, Pulse Width =£ 1 ms, Duty Cycle <S 2%)
VT
—
1.7
2
Volts
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 30 Ohms)
IGT
—
8
15
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 30 Ohms)
Holding Current
(Gate Open, VD = 12Vdc, Ij = 150mA)
VGT
—
0.9
1.5
Volts
IH
—
10
20
mA
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 2 A, IGR = 80 mA)
Circuit Commutated Turn-Off Time
(VD = VDFRM, ITM = 2 A. Pulse Widtn = 5° us>
dv/dt = 200 V/LLS, di/dt = 10 A/us, Tc = 75°C)
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated VDFSM. Exponential Rise, TC = 100°C)
»gt
—
1.6
—
us
»q
~
25
~
us
dv/dt
—
100
—
V/us
T I SEATING
~ ' ~ l PLANE
STYLE 3:
PIN1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM WIN MAX
A 0.570 0.620
B 0.380 0.405
C 0.160 0.190
D 0.025 0.035
F 0.142 0-147
G 0.095 0.105
H 0.110 0.155
J 0.014 0.022
K 0.500 0.562
L 0.045 0.055
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045
—
Z
0.080
MILLIMETERS
MIN MAX
14.48 15,75
9.66 10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2,80
3.93
0.36
12.70
0.55
14.27
1.15
1.39
4.83
5.33
2.54
3.04
2.04
2.79
1,15
1.39
5.97
6.47
0.00
1.27
1.15
—
2.04
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