BAV99DW 查看數據表（PDF） - Willas Electronic Corp.

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BAV99DW

SOT-363 Plastic-Encapsulate Diode

Willas Electronic Corp. 

WILLAS

S1O.0TA-S3U6RF3ACPElMaOsUtNicT -SECHnOcTaTKpYsBuARlaRtIEeR DREiCoTdIFeIERS -20V- 200V

SOD-123+ PACKAGE

FM120-M+

BAV99DWTHRU

FM1200-M+

Pb Free Product

Features

SWITCH•IBNaGtchDpIrOocDeEss design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

FEATUR•ELSow profile surface mounted application in order to

z FaospttiSmwizeitcbhoainrdgsSppaceee.d

• Low power loss, high efficiency.

z U• lHtriagh-Scmurraelnl tScuarpfaabcileityM, loowunfotrwPaarcdkvaogltaege drop.

z F•oHrigGhesnuregreacl aPpuabrpiliotys.e Switching Applications

• Guardring for overvoltage protection.

z H• iUglhtraChoignhd-supcetaedncsweitching.

z P• bS-iFlicroeneeppaitcakxiaagl pelainsaar vchaiipla, mbleetal silicon junction.

R• oLHeaSd-pfrreoedpuacrttsfomr epeatceknivnigrocnomdeentsaul sfftiaxn”dGa”rds of

MIL-STD-19500 /228

H• aRlooHgSenprofrdeuect pforropdaucckitnfgocropdaecskuifnfixg"Gco" de suffix “H”

z MoHiaslotguerne fSreeenpsroitdiuvcittyforLpeavcekiln1g code suffix "H"

MAKINMG:eKcJhGanical data

Maximu• mEpoRxayt:iUnLg9s4-@V0TrAa=te2d5f℃lame retardant

• Case : Molded plastic, SOD-123H

•

Terminals

:Plated

terPmainraalsm, seotlederrable

per

,

MIL-STD-750

Peak Repetitive PeMaekthreovde2r0s2e6voltage

Workin•gPPoelaarkityR:eIvnedricsaeteVdobltyagcaethode band

DC Blo•cMkionugntingVoPlotasgitieon : Any

Forwar•dWCeoignhtitn:uAopupsroCxiumraretendt 0.011 gram

Package outline

SOT-363

SOD-123H

0.146(3.7)

0.130(3.3)

0.012(0.3) Typ.

0.071(1.8)

0.056(1.4)

0.040(1.0)

0.024(0.6)

0.031(0.8) Typ.

Symbol

Limits

0.031(0.8) Typ.

Unit

VRRM

VRWM

VR

IFM

Dimensions in7i5nches and (millimeterVs)

300

mA

Average RectifMieAdXOIMutUpuMt CRuArTreINntGS AND ELECTRICAL CHARACTERISITOICS

150

mA

NRoanti-nRgsepate2ti5t℃iveaPmebaieknFt toermwpaerradtuSreurugnelesCsuortrheenrwt ise specified@. t = 1.0µs

2

Single phase half wave, 60Hz, resistive of inductive load.

For capacitive load, derate current by 20%

@ t = 1.0s

IFSM

1

A

Power Dissipation RATINGS

SYMBOL

FM120-MH

FM130-MH FM140-MHPFDM150-MH

200

FM160-MH FM180-MH

FM110m0-MWH

FM1150-MH FM1200-MH

UN

TMhaerkrinmgaCloRdeesistance Junction to Ambient Air

12

13

14 RθJA15

16 625 18

10℃/W 115

120

Maximum Recurrent Peak Reverse Voltage

VRRM

20

30

40

50

60

80

100

150

200 Vo

OMpaxeimrautminRgMJSuVnoclttaigoen Temperature

VRMS

14

21

28 TJ 35

42 150 56

70 ℃ 105

140 Vo

SMtaoxrimagume DteCmBploecrkaintguVreoltage

VDC

20

30

40 TSTG50

60-55-15080

100 ℃ 150

200 Vo

Maximum Average Forward Rectified Current

IO

1.0

Am

EPLeEakCFTorRwaIrCd SAuLrgeCCHurrAenRt 8A.3CmTs sEinRgleIShaTlfIsCinSe-w(aTvae mbIF=SM25℃ unless otherwise specified) 30

Am

superimposed on rated load (JEDEC method)

Typical ThermaPl Rareasimstaentceer (Note 2)

RSΘyJmA bol

Test conditions

M4I0N

MAX

UNIT

℃/

Typical Junction Capacitance (Note 1)

CJ

120

P

ORpeervaetinrgseTebmrpeearaktduroewRnanvgoeltage

TVJ(BR) R

-55 to +I1R2=52.5µA

75

-55 to +150 V

℃

Storage Temperature Range

Reverse voltage leakage current

CHARACTERISTICS

TSTG

- 65 to +175

℃

VR=75V

2.5

IR

µA

SYMBOL FM120-MH FM130-MHVFRM=12400V-MH FM150-MH FM160-MH FM180-M0H.0F2M51100-MH FM1150-MH FM1200-MH UN

Maximum Forward Voltage at 1.0A DC

Maximum Average Reverse Current at @T A=25℃

RFatoerdwDaCrdBlovcoklintaggVeoltage

@T A=125℃

VF

IRVF

0I.F5=01mA

IF=10mA

IF=50mA

0.70

0.5

10

07.8155

855

1000

0.9

mV

0.92 Vo

mA

NOTES:

IF=150mA

1250

1-JMuenascutrieodnatc1aMpHaZciatnadnacpeplied reverse voltage of 4.0 VDC. CT

VR=0, f=1MHz

2

pF

2- Thermal Resistance From Junction to Ambient

Reveres recovery time

IF=IR=10mA,Irr=0.1×IR,

trr

RL=100Ω

4

nS

2012-06

2012-1

WILLAS ELECTRONIC CORP.

WILLAS ELECTRONIC CORP.

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