TD62083AFNG(O,N) 查看數據表（PDF） - Toshiba

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产品描述 (功能)

比赛名单

TD62083AFNG(O,N)

TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC

Toshiba 

TD62083,084AFNG

Electrical Characteristics (Ta = 25°C)

CHARACTERISTIC

TD62083

Output Leakage Current

TD62084

Output Saturation Voltage

Input Current

TD62083

TD62084

Input Voltage

TD62083

TD62084

DC Current Transfer Ratio

Clamp Diode Reverse Current

Clamp Diode Forward Voltage

Input Capacitance

Turn−ON Delay

Turn−OFF Delay

SYMBOL

ICEX

VCE (sat)

IIN (ON)

IIN (OFF)

VIN (ON)

hFE

IR

VF

CIN

tON

tOFF

TEST

CIR−

CUIT

TEST CONDITION

VCE = 50V Ta = 25°C

1 VCE = 50V Ta = 85°C

VCE = 50V VIN = 1V

IOUT = 350mA, IIN = 500μA

2 IOUT = 200mA, IIN = 350μA

IOUT = 100mA, IIN = 250μA

VIN = 3.85V

3 VIN = 5V

VIN = 12V

4 IOUT = 500 μA, Ta = 85°C

VCE = 2 V, IOUT = 200mA

VCE = 2 V, IOUT = 250mA

VCE = 2 V, IOUT = 300mA

5 VCE = 2 V, IOUT = 125mA

VCE = 2 V, IOUT = 200mA

VCE = 2 V, IOUT = 275mA

VCE = 2 V, IOUT = 350mA

2 VCE = 2 V, IOUT = 350mA

Ta = 25°C, VR = 50V

6

Ta = 85°C, VR = 50V

7 IF = 350mA

―

RL = 125Ω, VOUT = 50V

8

RL = 125Ω, VOUT = 50V

MIN TYP. MAX UNIT

―

―

50

―

―

100

μA

―

―

500

―

1.3 1.6

―

1.1 1.3

V

―

0.9 1.1

― 0.93 1.35

― 0.35 0.5 mA

―

1.0 1.45

50

65

―

μA

―

―

2.4

―

―

2.7

―

―

3.0

―

―

5.0

V

―

―

6.0

―

―

7.0

―

―

8.0

1000 ―

―

―

―

50

μA

―

―

100

―

―

2.0

V

―

15

―

pF

―

0.1

―

μs

―

0.2

―

3

2009-11-02

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