TSSF4500 查看數據表（PDF） - Vishay Semiconductors
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TSSF4500 Datasheet PDF : 5 Pages
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TSSF4500
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
t ≤ 5 s, 2 mm from case
Leads not soldered
Tj
Tamb
Tstg
Tsd
RthJA
100
- 40 to + 100
- 40 to + 100
260
450
UNIT
°C
°C
°C
°C
K/W
250
200
150
RthJA
100
50
0
0
94 8029
20
40
60
80
100
T - Ambient Temperature (°C)
amb
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
125
100
75
RthJA
50
25
0
0
94 7916
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Forward voltage
IF = 100 mA, tp = 20 ms
VF
IF = 1.5 A, tp = 100 μs
VF
Temperature coefficient of VF
IF = 1 mA
TKVF
Reverse current
VR = 5 V
IR
Junction capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
Radiant intensity
Radiant power
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 μs
IF = 100 mA, tp = 20 ms
Ie
10
Ie
φe
Temperature coefficient of φe
Angle of half intensity
IF = 100 mA
TKφe
ϕ
Peak wavelength
IF = 100 mA
λp
Spectral bandwidth
Temperature coefficient of λp
IF = 100 mA
IF = 100 mA
Δλ
TKλp
Rise time
IF = 100 mA
tr
Fall time
IF = 100 mA
tf
Cut-off frequency
IDC = 70 mA, IAC = 30 mA pp
fc
Virtual source diameter
d
TYP.
1.35
2.4
- 1.8
160
20
200
35
- 0.7
± 22
890
40
0.2
30
30
12
2.1
MAX.
1.6
10
50
UNIT
V
V
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
MHz
mm
Rev. 1.7, 24-Aug-11
2
Document Number: 81040
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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