BB101C 查看數據表（PDF） - Hitachi -> Renesas Electronics

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BB101C

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Hitachi -> Renesas Electronics 

BB101C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source break down

voltage

V(BR)DSS

6

Gate 1 to source breakdown

voltage

V(BR)G1SS +6

Gate 2 to source breakdown

voltage

V(BR)G2SS ±6

Gate 1 to source cutoff current IG1SS

—

Gate 2 to source cutoff current IG2SS

—

Gate 1 to source cutoff voltage VG1S(off) 0.2

Gate 2 to source cutoff voltage VG2S(off) 0.4

Drain current

I D(op)

10

Forward transfer admittance |yfs|

16

Input capacitance

Ciss

1.2

Output capacitance

Coss 0.7

Reverse transfer capacitance Crss

—

Power gain

PG

16

Noise figure

NF

—

Note: Marking is “AU–”.

Typ Max Unit

—

—

V

—

—

V

—

—

V

—

+100 nA

—

±100 nA

—

0.8 V

—

1.0 V

15

20

mA

22

—

mS

1.7

2.2

pF

1.1

1.5

pF

0.012 0.03 pF

20

—

dB

2.0

3.0

dB

Test conditions

ID = 200 µA

VG1S = VG2S = 0

IG1 = +10 µA

VG2S = VDS = 0

IG2 = +10 µA

VG1S = VDS = 0

VG1S = +5 V

VG2S = VDS = 0

VG2S = ±5 V

VG1S = VDS = 0

VDS = 5 V, VG2S = 4 V

ID = 100 µA

VDS = 5 V, VG1S = 5 V

ID = 100 µA

VDS = 5 V, VG1 = 5 V

VG2S = 4 V, RG = 220 kΩ

VDS = 5 V, VG1 = 5 V

VG2S = 4 V

RG = 220 kΩ, f = 1 kHz

VDS = 5 V, VG1 = 5 V

VG2S = 4 V, RG = 220 kΩ

f = 1 MHz

VDS = 5 V, VG1 = 5 V

VG2S = 4 V

RG = 220 kΩ, f = 900 MHz

3

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