BB102C 查看數據表（PDF） - Renesas Electronics
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BB102C Datasheet PDF : 13 Pages
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BB102C
Forward Transfer Admittance
vs. Gate1 Voltage
25
20
6
V
5
V
4
V
3
V
15
2V
10
V DS = 9 V
R G = 680 k Ω
f = 1 kHz
5
VG2S = 1 V
0
2
4
6
8
10
Gate1 Voltage V G1 (V)
Power Gain vs. Gate Resistance
30
25
20
15
10
V DS = 9 V
5
V G1= 9 V
V G2S = 6 V
f = 900 MHz
0
10 20 50
100 200
500 1000
Gate Resistance R G (k Ω)
Noise Figure vs. Gate Resistance
4
V DS = 9 V
V G1= 9 V
3 V G2S = 6 V
f = 900 MHz
2
1
0
10 20
50 100 200 500 1000
Gate Resistance R G (k Ω)
Power Gain vs. Drain Current
30
25
20
15
10 V DS = 9 V
V G1= 9 V
5
V G2S = 6 V
RG= variable
f = 900 MHz
0 5 10 15 20 25 30 35 40
Drain Current I D (mA)
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