BB102M 查看數據表（PDF） - Renesas Electronics

零件编号

产品描述 (功能)

比赛名单

BB102M

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Renesas Electronics 

BB102M

S11 Parameter vs. Frequency

.8 1

.6

.4

.2

1.5

2

3

4

5

10

0

.2 .4 .6 .8 1 1.5 2 3 4 5 10

–10

–.2

–5

–4

–3

–.4

–2

–.6

–.8 –1

–1.5

Test Condition : VDS= 9 V , VG1 = 9 V

VG2S = 6 V , R G = 560 k Ω

50 to 1000 MHz (50 MHz step)

S21 Parameter vs. Frequency

90° Scale: 1 / div.

120°

60°

150°

30°

180°

0°

–150°

–30°

–120°

–60°

–90°

Test Condition : VDS= 9 V , VG1 = 9 V

VG2S = 6 V , R G = 560 k Ω

50 to 1000 MHz (50 MHz step)

S12 Parameter vs. Frequency

90° Scale: 0.01 / div.

120°

60°

150°

30°

180°

0°

–150°

–30°

–120°

–90°

–60°

Test Condition : VDS= 9 V , VG1 = 9 V

VG2S = 6 V , R G = 560 k Ω

50 to 1000 MHz (50 MHz step)

S22 Parameter vs. Frequency

.8 1

.6

.4

.2

1.5

2

3

4

5

10

0

.2 .4 .6 .8 1 1.5 2 3 4 5 10

–10

–.2

–5

–4

–3

–.4

–2

–.6

–.8 –1

–1.5

Test Condition : VDS= 9 V , VG1 = 9 V

VG2S = 6 V , R G = 560 k Ω

50 to 1000 MHz (50 MHz step)

Share Link: