BB305M 查看數據表（PDF） - Hitachi -> Renesas Electronics

零件编号

产品描述 (功能)

比赛名单

BB305M

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Hitachi -> Renesas Electronics 

BB305M

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

Gate1 to source voltage

Symbol

VDS

VG1S

Gate2 to source voltage

Drain current

Channel power dissipation

Channel temperature

Storage temperature

VG2S

ID

Pch

Tch

Tstg

Ratings

Unit

12

V

+10

V

–0

±10

V

25

mA

150

mW

150

°C

–55 to +150

°C

2

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