BB501M 查看數據表（PDF） - Hitachi -> Renesas Electronics
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BB501M Datasheet PDF : 13 Pages
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BB501M
Drain Current vs. Gate Resistance
20
15
10
5
VDS = VG1 = 5 V
VG2S = 4 V
0
10
20
50
100
Gate Resistance R G (k Ω )
Power Gain vs.
Gate2 to Source Voltage
25
20
15
10
V DS = 5 V
5
R G = 47 kΩ
f = 900 MHz
0
1
2
3
4
Gate2 to Source Voltage V G2S (V)
Noise Figure vs.
Gate2 to Source Voltage
5
V DS = 5 V
4
R G = 47 kΩ
f = 900 MHz
3
2
1
1
2
3
4
Gate2 to Source Voltage V G2S (V)
Input Capacitance vs.
Gate2 to Source Voltage
4
3
2
1 V DS = 5 V
R G = 47 kΩ
f = 1 MHz
0
0
1
2
3
4
Gate2 to Source Voltage V G2S (V)
8
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