BB503C 查看數據表（PDF） - Hitachi -> Renesas Electronics
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BB503C Datasheet PDF : 13 Pages
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BB503C
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Symbol
VDS
VG1S
Gate2 to source voltage
VG2S
Drain current
ID
Channel power dissipation
Pch
Channel temperature
Tch
Storage temperature
Tstg
Ratings
Unit
6
V
+6
V
–0
+6
V
–0
20
mA
100
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown V(BR)DSS
6
voltage
Gate1 to source breakdown V(BR)G1SS
+6
voltage
Gate2 to source breakdown V(BR)G2SS
+6
voltage
Gate1 to source cutoff current IG1SS
—
Gate2 to source cutoff current IG2SS
—
Gate1 to source cutoff voltage VG1S(off)
0.5
Gate2 to source cutoff voltage VG2S(off)
0.5
Drain current
I D(op)
7
Forward transfer admittance |yfs|
19
Input capacitance
c iss
1.4
Output capacitance
c oss
0.7
Reverse transfer capacitance crss
—
Power gain
PG
17
Noise figure
NF
—
Typ
Max
Unit
—
—
V
—
—
V
—
—
V
—
+100 nA
—
+100 nA
0.7
1.0
V
0.7
1.0
V
10
13
mA
24
29
mS
1.7
2.0
pF
1.1
1.5
pF
0.025 0.05 pF
22
—
dB
1.8
2.4
dB
Test Conditions
ID = 200µA
VG1S = VG2S = 0
IG1 = +10µA
VG2S = VDS = 0
IG2 = +10µA
VG1S = VDS = 0
VG1S = +5V
VG2S = VDS = 0
VG2S = +5V
VG1S = VDS = 0
VDS = 5V, VG2S = 4V
ID = 100µA
VDS = 5V, VG1S = 5V
ID = 100µA
VDS = 5V, VG1 = 5V
VG2S = 4V, RG = 47kΩ
VDS = 5V, VG1 = 5V
VG2S =4V
RG = 47kΩ, f = 1kHz
VDS = 5V, VG1 = 5V
VG2S =4V, RG = 47kΩ
f = 1MHz
VDS = 5V, VG1 = 5V
VG2S =4V, RG = 47kΩ
f = 900MHz
2
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