RF2306 查看數據表（PDF） - RF Micro Devices

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产品描述 (功能)

比赛名单

RF2306

GENERAL PURPOSE AMPLIFIER

RF Micro Devices 

4

Typical Applications

• Broadband, Low Noise Gain Blocks

• IF or RF Buffer Amplifiers

• Driver Stage for Power Amplifiers

RF2306

GENERAL PURPOSE AMPLIFIER

• Final PA for Low Power Applications

• Portable Battery Powered Equipment

• Broadband Test Equipment

Product Description

4

The RF2306 is a general purpose, low cost RF amplifier

IC. The device is manufactured on an advanced Gallium

Arsenide Heterojunction Bipolar Transistor (HBT) pro-

cess, and has been designed for use as an easily-cas-

cadable 50Ω gain block. Applications include IF and RF

amplification in wireless voice and data communication

products operating in frequency bands up to 2000MHz.

The device is self-contained with 50Ω input and output

impedances and requires only two external DC biasing

elements to operate as specified.

.156

.152

1

.004

MIN

.017

.195

.191

.050

.240

.056

.232

.052

5°

Optimum Technology Matching® Applied

Si BJT

üGaAs HBT

GaAs MESFET

Si Bi-CMOS

SiGe HBT

Si CMOS

RF IN 1

GND 2

GND 3

GND 4

8 RF OUT

7 GND

6 GND

5 GND

.022

.018

.008

Package Style: SOP-8

Features

• DC to 2000MHz Operation

• Internally matched Input and Output

• 20dB Small Signal Gain

• 3.5dB Noise Figure

• 10mW Linear Output Power

• Single Positive Power Supply

Ordering Information

RF2306

General Purpose Amplifier

RF2306 PCBA Fully Assembled Evaluation Board

Functional Block Diagram

RF Micro Devices, Inc.

7625 Thorndike Road

Greensboro, NC 27409, USA

Tel (336) 664 1233

Fax (336) 664 0454

http://www.rfmd.com

Rev B2 000228

4-63

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