BSC042N03SG 查看數據表（PDF） - Infineon Technologies
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BSC042N03SG Datasheet PDF : 10 Pages
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D=50 A; V GS=10 V
7
BSC042N03S G
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
parameter: I D
2.5
6
5
98 %
4
typ
3
2
1
2
500 µA
1.5
50 µA
1
0.5
0
-60 -20
20
60 100 140 180
T j [°C]
0
-60 -20
20
60 100 140 180
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104 10000
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
103
103
1000
Ciss
Coss
150 °C 25 °C 150°C, 98%
102
25°C, 98%
101
100
102
100
0
Rev. 1.91
10-1
Crss
5
10
15
20
25
30
V DS [V]
10-2
0
page 6
0.4
0.8
1.2
1.6
2
V SD [V]
2009-10-22
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