EDB104 查看數據表（PDF） - Diode Semiconductor Korea
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EDB104 Datasheet PDF : 2 Pages
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Diode Semiconductor Korea
EDB101 --- EDB106
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC FIG.2 -- TYPICAL FORWARD CURRENT
DERATING CURVE
50
10
N 1.
N 1.
(+)
25VDC
(approx)
(-)
D.U.T.
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE1)
PULSE
GENERATOR
(NOTE2)
trr
+0.5A
0
-0.25A
-1.0A
1cm
NOTES:1.RISETIME=7ns MAX. INPUT IMPEDANCE=1MΩ.22pF
2.RISE TIME=10ns MAX. SOURCE IMPEDANCE=5OΩ
SET TIMEBASEFOR
10 ns /cm
2
Single phaes
half wave 60Hz
resistive or
inductive load
1
0
0
25 50 75 100 125 150
AMBIENT TEMPERATURE ( )
FIG.3 -- TYPICAL REVERSE CHARACTERISTICS
100
TJ=150
10
TJ=100
1.0
FIG.4 -- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
1 .0
0 .1
0.1
TJ=25
.01
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG.5 -- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
.0 1
TJ=125
Pulse W idth
=300u S
.0 0 1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.6 -- TYPICAL JUNCTION CAPACITANCE
60
50
8.3ms Single Half Sine Wave
40
TJ=25
30
20
10
0
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
200
TJ=25
100
60
40
20
EDB101-EDB104
10
6
EDB105-EDB106
4
2
1
.1
1
4
10
100
REVERSE VOLTAGE, VOLTS
www.diode.kr
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