BUK201-50X 查看數據表（PDF） - Philips Electronics
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BUK201-50X Datasheet PDF : 13 Pages
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Philips Semiconductors
PowerMOS transistor
TOPFET high side switch
Product specification
BUK201-50X
VSG / V
8.0
BUK201-50X
7.5
7.0
6.5
-60
-20
20
60
100
140
180
Tj / C
Fig.22. Typical status clamping voltage, VSG = f(Tj).
conditions IS = 100 µA, VBG = 13 V
IL(OC) / mA
800
BUK201-50X
700
max.
600
500
400
typ.
300
200
min.
100
0
-50
0
50
100
150
200
Tmb / C
Fig.23. Low load current detection threshold.
IL(OC) = f(Tj); conditions VIG = 5 V; VBG = 13 V
VBG(TO) / V
5
BUK201-50X
4
on
3
off
2
1
0
-60
-20
20
60
100
140
180
Tj / C
Fig.24. Supply typical undervoltage thresholds.
VBG(TO) = f(Tj); conditions VIG = 3 V; IL = 80 mA
VBG(LP) / V
46
45
BUK201-50X
off
44
on
43
42
-60
-20
20
60
100
140
180
Tj / C
Fig.25. Supply typical overvoltage thresholds.
VBG(LP) = f(Tj); conditions VIG = 5 V; IL = 80 mA
VBG / V
65
BUK201-50X
60
IG =
1 mA
10 uA
55
50
-60
Fig.26.
-20
20
60
100
140
180
Tj / C
Typical battery to ground clamping voltage.
VBG = f(Tj); parameter IG
IL / A
30
BUK201-50X
25
20
15
10
5
0
-25
-20
-15
-10
-5
0
VLG / V
Fig.27. Typical negative load clamping characteristic.
IL = f(VLG); conditions VIG = 0 V, tp = 300 µs, 25 ˚C
July 1996
9
Rev 1.000
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