EBR25UC8ABFD 查看數據表（PDF） - Elpida Memory, Inc

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EBR25UC8ABFD

256MB Direct Rambus™ DRAM RIMM™ Module

Elpida Memory, Inc 

EBR25UC8ABFD

Electrical Specifications

Absolute Maximum Ratings

Symbol

VI,ABS

VDD,ABS

TSTORE

Parameter

min.

Voltage applied to any RSL or CMOS signal pad with

respect to GND

−0.3

Voltage on VDD with respect to GND

−0.5

Storage temperature

−50

max.

Unit

VDD + 0.3

V

VDD + 1.0

V

+100

°C

Caution

Exposing the device to stress above those listed in Absolute Maximum Ratings could cause

permanent damage. The device is not meant to be operated under conditions outside the limits

described in the operational section of this specification Exposure to Absolute Maximum Rating

conditions for extended periods may affect device reliability.

DC Recommended Electrical Conditions

Symbol

Parameter and conditions

min.

max.

Unit

VDD

Supply voltage*1

2.50 − 0.13

2.50 + 0.13

V

VCMOS

CMOS I/O power supply at pad

2.5V controllers

2.50 − 0.13

2.50 + 0.25

V

1.8V controllers

1.8 − 0.1

1.8 + 0.2

V

VREF

Reference voltage*1

1.4 − 0.2

1.4 + 0.2

V

SVDD

Serial Presence

supply

Detector-

positive

power

2.2

3.6

V

Note: See Direct RDRAM datasheet for more details.

Data Sheet E0317E20 (Ver. 2.0)

7

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