GOG95012C 查看數據表（PDF） - Green Power Semiconductors
零件编号
产品描述 (功能)
比赛名单
GOG95012C Datasheet PDF : 2 Pages
| |||
Green Power
Semiconductors
GPS - Green Power Semiconductors SPA
Factory: Via Ungaretti 10, 16157 Genova, Italy
Phone: +39-010-667 8800
Fax: +39-010-667 8812
Web: www.gpsemi.it
E-mail: info@gpsemi.it
GOG9xx12C
THREE PHASE AC-DC BRIDGE
Fuse protection
Temperature sensors
Snubber for SCR's protections
Compact design
LINE VOLTAGE UP TO 500V
DC OUTPUT CURRENT 1200A
Line to line voltage
GOG94012C GOG95012C
400
500
Characteristic
IDC
DC output current
VINS (rms) Insulation voltage
Conditions
Value
1200 A
3000 V
Value
1200 A
3000 V
THYRISTOR TRIGGERING CHARACTERISTICS
VGT
Gate trigger voltage
Tj = 25 °C, VD = 5 V
IGT
Gate trigger current
Tj = 25 °C, VD = 5 V
dV/dt
Critical rate of rise off-state voltage Tj= 125 °C
VRRM
Blocking Voltage
Tj = 125 °C
FUSE TYPE SIBA 2068132.1000
VNF
Rated voltage
INF
Rated current
PVF
Power loss
I²t
Total I2t
At rated current
At 660V
3V
300 mA
1000 V/us
1200 V
3V
300 mA
1000 V/us
1600 V
690 V
1000 A
131 W
860 kA2s
690 V
1000 A
131 W
860 kA2s
MECHANICAL AND THERMAL CHARACTERISTICS
Width
Depth
Height
Mass
Ta max Max amb. op. Temp.
Tstg
Storage temperature
400 mm
340 mm
500 mm
30 Kg
40 °C
-40/ +60 °C
400 mm
340 mm
500 mm
30 Kg
40 °C
-40/ +60 °C
Document GOG9xx12CT002
Share Link: 